1 AM3837P analog power preliminary publication order number: ds-am3837_b these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical a pplications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds(on) (ohm) i d (a) 0.130 @ v gs = -4.5v 2.5 0.190 @ v gs = -2.5v 1.9 -26.5 mosfet product summary p-channel 30-v (d-s) mosfet with schottky diode ?low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe tsop-6 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol typ max t <= 10 sec 93 110 steady state 130 150 thermal resistance ratings maximum junction-to-ambient a o c/w r thja parameter v f (v) diode forward voltage 30 0.48v @ 1.0a 1.0 schottky product summary v ka (v) i f (a) symbol maximum units v ds -26.5 v ka 30 v gs 12 t a =25 o c2.5 t a =70 o c1.9 i dm 10 i s -1.6 i f 0.5 i fm 8 t a =25 o c1.15 t a =70 o c0.7 t a =25 o c1.0 t a =70 o c0.6 t j , t stg -55 to 150 o c average forward current (schottky) maximum power dissipation (mosfet) a pulsed forward current (schottky) v absolute maximum ratings (t a = 25 o c unless otherwise noted) parame te r pulsed drain current (mosfet) b gate-source voltage (mosfet) reverse voltage (schottky) continuous drain current (t j =150 o c) (mosfet) a i d a drain-source voltage (mosfet) continuous source current (mosfet diode conduction) a maximum power dissipation (schottky) a operating junction and storage temperature range p d w s d g p-channel mosfet k a tsop-6 top view 1 2 34 k n/c d 6 5 g a s
2 AM3837P analog power preliminary publication order number: ds-am3837_b notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing . analog power (apl) reserves the right to make changes without further notice to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does apl assume any liabi lity arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitatio n special, consequential or incidental damages. ?typical? parameters which may be provided in apl data sheets and/or spec ifications can and do vary in different applications and actual performance may vary over time. all oper ating parameters, including ?typicals? must be validated for e ach customer application by customer?s technical experts. apl does not conv ey any license under its patent ri ghts nor the rights of others. apl products are not designed, intended, or authorized for use as components in system s intended for surgical implant into the body, or othe r applications intended to support or sustain life, or fo r any other application in which the failur e of the apl product could create a situat ion where personal injury or death may occur. should buyer purchase or use apl products for any such unintended or unauthorized application, buye r shall indemnify and hold apl and its officers, employees, subsid iaries, affiliates, and distributors harmless against all claims, cos ts, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that apl was negligent regarding the design or manufacture of the pa rt. apl is an equal opportunity/affirmative action employer. min typ max i f = 0.5 a 0.48 v i f = 0.5 a, t j = 125 o c 0.4 v v r = 30 v 0.1 v r = 30 v, t j = 75 o c 1 v r = 30 v, t j = 125 o c 10 junction capacitance c t v r = 10 v 31 pf forward voltage drop v f schottky specifications (t a = 25 o c unless otherwise noted) ma i rm maximum reverse leakage current test conditions symbol parameter limits unit min typ max gate-threshold voltage v gs(th) v ds = v gs , i d = -250 ua -1.0 gate-body leakage i gss v ds = 0 v, v gs = +/-12 v 100 na v ds = -21 v, v gs = 0 v -1 v ds = -21 v, v gs = 0 v, t j = 55 o c -10 on-state drain current a i d(on) v ds = -5 v, v gs = -4.5 v -5 a v gs = -4.5 v, i d = -2.5 a 0.130 v gs = -2.5 v, i d = -1.9 a 0.190 forward tranconductance a g fs v ds = -5 v, i d = -2.5 a 3s diode forward voltage v sd i s = -1.6 a, v gs = 0 v -0.70 v total gate charge q g 6.0 gate-source charge q gs 0.80 gate-drain charge q gd 1.30 turn-on delay time t d(on) 6.5 rise time t r 20 turn-off delay time t d(off) 31 fall-time t f 21 v dd = -5 v, r l = 5 ohm, v gen = -4.5 v, r g = 6 ohm ns drain-source on-state resistance a dynamic b v ds = -5 v, v gs = -4.5 v, i d = -2.5 a nc ? r ds(on) mosfet specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions symbol parameter limits unit
3 AM3837P analog power preliminary publication order number: ds-am3837_b typical electrical characteristics output characteristics transfer characteristics on-resistance vs. junction temperature gate charge capacitance on-resistance vs. drain current 0 1 2 3 4 5 6 0 0.5 1 1.5 2 2.5 v ds - drain-to-soruce voltage (v) i d - drain current (a ) -2.5v -2.0v -1.8v v gs =- 4.5v 0 1 2 3 4 5 0.511.522.53 v gs - gate-to-source voltage (v) i d - drain current (a ) t a = -55 o c 125 o c 25 o c 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 0123456 i d - drain current (a) r ds(on) - normalized on-resistance -4.5v -2.5v 0 100 200 300 400 500 600 05101520 v ds - drain-to- source voltage (v) c - capacitance (pf ) c iss c rss c oss -10 -8 -6 -4 -2 0 03691215 qg, charge (nc) vgs voltage ( v ) 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) r ds(on) , - o n-r e sis tanc e (n orm a lize d) v gs = -4.5v
4 AM3837P analog power preliminary publication order number: ds-am3837_b typical electrical characteristics normalized thermal transient im pedance, junction-to-ambient single pulse power threshold voltage source-drain diode forward voltage on -resistance vs.gate-to source voltage 0 2 4 6 8 10 0.01 0.1 1 10 100 1000 time (sec) power (w) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 square wave pulse duration (sec) n orm ai l i zed e f f ect i ve transi ent therm al im pedance r ja (t) = r(t) + r ja r ja = 130 o c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single puls e 0.01 0.02 0.05 0.1 0.2 d = 0.5 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd - source-to-drain voltage (v) i s - source current (a) t a = 125 o c 25 o c 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 12345 v gs - gate-to-source voltage (v) r ds(on) - on-resistance (ohm) 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 t j , - temperature ( o c) v gs(th) variance (v) i d =- 250 a
5 AM3837P analog power preliminary publication order number: ds-am3837_b package information tsop-6: 6lead
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